Boulder, CO (September 2024) - This experiment explored the impact of current draw on a Power Distribution Network (PDN) including switching noise and rail collapse. Results indicate that placing the decoupling capacitor close to the source relative to the component reduces switching noise. Additionally, using a larger capacitor does not improve the switching noise beyond a certain point. However, the larger capacitor does reduce the rail collapse when the component is switched on.
Figure 1: Wiring diagram for the slammer circuit using an MCP601-I/P operational amplifier and pin 13 on an Arduino Uno development board.
Figure 2: Shows a 2.75V drop over the 10Ω resistor from the slammer circuit.
The setup (Figure 1) included creating a 9-volt power rail with a DC power supply to power the Arduino and the MOSFET source. Figure 2 shows the voltage drop across the 10Ω resistor used to determine the loop current of 275mA. The MOSFET gate was set up to be able to manually switch between the slow edge from the operational amplifier which has a rise time of approximately 3 microseconds (Figure 3) and the fast edge from the Arduino pin which has a rise time of approximately 50 nanoseconds (Figure 4). Comparing the respective PDN switching noise without a decoupling capacitor shows that the fast edge generates significantly more switching noise than the slow edge.
Based on Equation 1, which provides the instantaneous voltage drop across an inductor, this behavior is expected; an increase in the rise time will result in a lower voltage drop. This indicates that decoupling capacitors are more important for signals with faster edges. With the 4V drop from Figure 5, the 50ns rise time from Figure 3, and the measure 275mA calculated from the results of Figure 2, the loop inductance is 727nH.
Figure 3: Shows the rise time of the operational amplifier output, depicted in yellow, is approximately 3μs for 4V. The output from Pin 13 on the Arduino is depicted in green.
Figure 4: Shows the rise time of pin 13 on the Arduino, depicted in green, on the order of 50ns. The operational amplifier output is depicted in yellow.
The voltage drop on the PDN for the fast edge is shown in Figure 3 where the voltage drops to nearly half of its initial value. Adding a decoupling capacitor close to the MOSFET reduces this voltage drop significantly. This result is the same whether using a 1μF or 1,000μF capacitor because either is large enough to provide enough charge to overcome the instantaneous drop in voltage. Equation 2 can be used to determine the minimum capacitor size, C, needed to limit the instantaneous voltage drop, dV, for a signal with a rise time of dt and a current of i.
Figure 5: Shows the switching noise associated with the signal from the fast edge and no decoupling capacitor. Power drops from 9V to 5V, depicted in green, when the load is applied.
Figure 6: Shows the switching noise associated with the fast edge and a 1μF decoupling capacitor placed next to the MOSFET.
Moving the capacitor further from the MOSFET results in increased noise when compared to placing it close, however, it still provides an improvement over not having a decoupling capacitor. This results from the increased inductance from the breadboard rail between the MOSFET and the capacitor. An equivalent circuit shows this relationship in Figure XXXX.
Finally, the rail collapse for the different capacitors was analyzed as shown in Figures 7 and 8 for both the slow and fast edges. Although the increase in capacitance does not impact switching noise in this case, it does impact rail collapse. The larger capacitor can maintain the voltage better, but both capacitors keep the voltage drop within a few millivolts of the initial value.
Figure 7: Shows the rail collapse of the PDN using the slow edge with a 1μF and 1,000μF capacitor depicted in orange and green, respectively.
Figure 7: Shows the rail collapse of the PDN using the fast edge with a 1μF and 1,000μF capacitor depicted in orange and green, respectively.
The key takeaways from this experiment are that signals with fast rise times are more impacted by switching noise and placing decoupling capacitors close to the relevant component greatly reduces the switching noise. Equation 1 can be used to estimate the loop inductance and Equation 2 can be used to estimate a minimum capacitor size required to meet a voltage drop requirement.
Figure 8: Equivalent circuit for the slammer circuit. Location 2 represents a position close to the MOSFET and Location 3 represents a position further down the breadboard rail. The increased inductance between these two positions is responsible for the increased switching noise when moving the decoupling capacitor further away from the component. Additionally, using a high-quality DC power supply makes the Thevenin resistance extremely small.